- 资讯公开站gnews_tsmc_industry
Samsung steps up HBM cooling as TSMC expands CoWoS - digitimes
- 资讯公开站Digitimes
Samsung steps up HBM cooling as TSMC expands CoWoS
Samsung Electronics is expanding its thermal-management efforts for high-bandwidth memory (HBM) beyond the memory stack as increasingly large chip packages raise heat-management challenges.
- 资讯公开站Digitimes
HBM4 prices to nearly triple in 2027, memory makers see windfall margins spread
Memory supply and demand will tighten further in 2027. According to supply chain sources, South Korean memory makers have recently quoted aggressive long-term contract prices for sixth-generation high-bandwidth memory (H…
- 资讯公开站EE Times
Kepler Aims to Launch Energy-Saving Replacement for HBM in 2027
- 资讯公开站Digitimes
Samsung reportedly seeks more than triple HBM prices for 2027 as HBM4 ramps
Samsung Electronics is reportedly seeking 2027 prices for its next-generation high-bandwidth memory (HBM) that are more than three times the price of its current HBM3E product, industry sources said. The increase would c…
- 资讯公开站Digitimes
Nanya Tech expands 3D OSAT to chase HBM-like demand
Nanya Technology is stepping up investment in new factory capacity to expand packaging and testing as some customers move into trial production for specification-based designs. The company said it has won approval from t…
- 资讯公开站Digitimes
Micron ramps up HBM capacity at Taiwan's four major sites
Micron Technology's revenue and profit for the fourth quarter of fiscal 2026 both beat expectations, and the company expects capacity supply to be even tighter in 2027 and 2028 than in 2026. Donghui Lu, vice president of…
- 资讯公开站Digitimes
Micron eyes NVHBM profits with TSMC custom HBM push
Micron is using an externally manufactured base die in NVHBM, a custom high-bandwidth memory (HBM) product it is co-developing with Nvidia, as the company bets that customization can unlock added value even when manufact…
- 资讯公开站Digitimes
Micron hikes 2027 HBM prices after missing 2026 memory surge on fixed contracts
Micron Technology has sharply raised 2027 prices for high-bandwidth memory (HBM), the stacked DRAM packaged with AI accelerators. The increase comes after a year in which fixed contract prices left HBM largely outside th…
- 资讯公开站Digitimes
DIGITIMES：AI扩展正从芯片微缩转向系统集成
DIGITIMES Insight: AI scaling is moving from chip shrinkage to system integration
台积电表示，AI性能提升的下一阶段将更多依赖多芯片、内存与先进封装的系统级整合，而非单一芯片微缩，这可能重塑半导体竞争格局。
- 资讯公开站Digitimes
三星HBM4提振代工业务，2nm推进持续
Samsung Foundry gets boost from HBM4 as 2nm push continues
三星电子HBM4量产为其代工业务带来及时提振，内存需求上升转化为4nm逻辑产线更多订单。
- 资讯公开站gnews_sk_hynix
HBM明年将消耗全球DRAM晶圆产能的30% - 朝鲜日报
HBM to Consume 30% of Global DRAM Wafer Capacity Next Year - 조선일보
- 资讯公开站Digitimes
Netlist就HBM专利使用起诉美光、英伟达、博通和谷歌
Netlist challenges Micron, Nvidia, Broadcom, Google over alleged HBM patent use
Netlist已对美光及其下游客户英伟达、博通和谷歌提起法律诉讼，指控其未经授权使用该公司的高带宽内存（HBM）专利技术。此案正值AI应用推动HBM需求飙升之际。
- 资讯公开站Digitimes
专栏：AI改变平衡，内存与逻辑碰撞
Column: Memory and logic collide as AI shifts the balance
随着HBM成本接近GPU-HBM CoWoS封装的一半，内存还能被视为AI计算的被动组件吗？答案要回到“内存墙”，这一挑战塑造了近半个世纪的半导体发展。
- 资讯公开站Digitimes
AMD苏姿丰据悉10月再访韩国，深化HBM4与NPU合作
AMD's Lisa Su reportedly revisiting South Korea in October to deepen HBM4, NPU ties
AMD CEO苏姿丰据悉将于2026年10月再次访问韩国，继3月访韩正式启动与三星电子的下一代AI内存合作后，此行预计将进一步扩大合作，涉及HBM4与NPU等领域。
- 资讯公开站Semiconductor Engineering
芯片产业技术论文汇总：9月29日
Chip Industry Technical Paper Roundup: Sept. 29
涵盖A7 CFET与A10 NSFET对比、晶圆级亚5nm MoS₂晶体管、3D HI多千瓦供电、铜微结构与TSV残余应力、GPU Rowhammer攻击、门级RTL木马定位、LLM推理中HBM与主机内存并发访问等。
- 资讯公开站Digitimes
专栏：美光2.5亿美元风投基金不止关乎HBM利润，台湾也有份
Column: Why Micron's US$250M venture fund is about more than HBM margins—Taiwan has a stake in it
美光于2026年8月中旬推出2.5亿美元的风投基金Micron Ventures Paradigm Fund，同时承诺2026财年资本支出超250亿美元、到2035年在美国投资超2500亿美元。该基金旨在为美光提供更多布局。
- 资讯公开站gnews_micron_ir
美光在新加坡动工兴建新的 HBM 先进封装设施
Micron Breaks Ground on New HBM Advanced Packaging Facility in Singapore - investors.micron.com
- 资讯公开站gnews_nvidia_supply
英伟达可能减少每颗GPU的HBM用量，但总体采购量增加
Nvidia Could Use Less HBM Per GPU—and Buy More Overall - drrobertcastellano.substack.com
- 资讯公开站rss_digitimes
三星调整DRAM路线图，优先推进B1b混合键合用于D0a、HBM5
Samsung reshuffles DRAM roadmap, prioritizing B1b hybrid bonding for D0a, HBM5
三星电子正在调整其下一代动态随机存取存储器（DRAM）路线图，将B1b晶圆对晶圆（W2W）混合键合技术从特定项目开发提升为D0a的核心技术，D0a是三星首个sub-10nm DRAM世代。业界观察人士认为，三星提前推动B1b DRAM商业化，也可能惠及其下一代高带宽内存（HBM）产品，包括HBM5。
- 资讯公开站Digitimes
突破16层：HBM堆叠考验先进封装设备商
Beyond 16 layers: HBM stacks test advanced packaging equipment makers
在9月25日新加坡Innovate Together 2026会议上，ASM、ASMPT与KLA等设备商表示，下一代先进封装挑战已从单台工具性能扩展至混合键合、界面材料与缺陷管理。
- 资讯公开站Digitimes
SK海力士携手台积电测试HBM5，HBM4进入英伟达下一代平台
SK Hynix tests HBM5 with TSMC as HBM4 enters Nvidia's next platform
SK海力士9月28日称已用台积电CoWoS封装验证其HBM5内存，意味着下一代之后的产品已与代工厂展开合作，而其HBM4才刚被集成进英伟达Vera Rubin平台。
- 资讯公开站Digitimes
三星加速P5工厂，HBM将占DRAM产能近30%
HBM to take nearly 30% of DRAM capacity as Samsung speeds up P5
随着HBM和传统DRAM供应趋紧，三星电子加快新存储产能布局。预计到2027年，HBM将占DRAM厂商总晶圆产能的近30%，高于目前的约20%。
- 资讯公开站Digitimes
IDC：AI智能体增长将加剧全球算力短缺至2027年
IDC says AI agent growth will widen global compute shortage by 2027
AI智能体进入企业工作流，推动AI基础设施需求激增。IDC与浪潮信息报告警告，全球算力供需缺口将持续扩大至2030年。
- 资讯公开站Semiconductor Engineering
HBM与主机内存并发访问提升LLM推理吞吐（佐治亚理工、NVIDIA、斯坦福）
Concurrent HBM And Host Memory Access Improves LLM Inference Throughput (Georgia Tech, Nvidia, Stanford)
摘要显示，佐治亚理工、英伟达研究院与斯坦福大学研究人员发表技术论文《BOOST: Concurrent Access to Host Memory and HBM to Accelerate LLM Inference》。该论文提出BOOST，称其为首个可并发且按比例访问GPU两级内存的运行时系统，能聚合主机内存与HBM带宽以加速LLM推理。
意义：若成立，该运行时系统可突破HBM容量与带宽瓶颈，为LLM推理提供更高吞吐，对GPU内存管理与推理框架开发者有参考价值。
