- 资讯公开站Semiconductor Engineering
Advancing The CFET-Based Device Roadmap: Novel Integration Modules And Standard Cell Configurations
- 资讯公开站Semiconductor Engineering
Chip Industry Week In Review
CFETs push scaling beyond 10 angstroms; physical AI M&A and funding; AI data centers drive new power/packaging investments; new Spectre-v2 attack targets JIT compilers; photonics moves closer to compute; quantum HW;…
- 资讯公开站Semiconductor Engineering
芯片产业技术论文汇总：9月29日
Chip Industry Technical Paper Roundup: Sept. 29
涵盖A7 CFET与A10 NSFET对比、晶圆级亚5nm MoS₂晶体管、3D HI多千瓦供电、铜微结构与TSV残余应力、GPU Rowhammer攻击、门级RTL木马定位、LLM推理中HBM与主机内存并发访问等。
- 资讯公开站Semiconductor Engineering
A7 CFET与A10纳米片FET对比：从寄生效应到芯片可靠性（TUM、UNIMORE、应用材料）
Comparing A7 CFET and A10 Nanosheet FETs From Parasitics to Chip Reliability (TUM, UNIMORE, Applied Materials)
摘要显示，来自慕尼黑工业大学、摩德纳与雷焦艾米利亚大学及应用材料的研究人员发表技术论文，提出一种基于物理的热感知与老化感知的系统-技术协同评估流程，用于比较A7 CFET与A10纳米片FET技术，评估范围从单元寄生RC到芯片可靠性。
意义：为先进节点CFET与纳米片FET的选型提供从寄生到可靠性的系统级评估方法，有助于芯片设计者权衡工艺与可靠性。
